Structural and Magnetic Properties of Ni81Fe19 Thin Film Grown on Si(001) Substrate via Single Graphene Layer

被引:1
|
作者
Li, Gui-fang [1 ]
Liu, Shibin [1 ]
Yang, Shanglin [1 ]
Du, Yongqian [1 ]
机构
[1] Northwestern Polytech Univ, Sch Elect & Informat, Xian 710072, Shaanxi, Peoples R China
关键词
SPIN INJECTION; SILICON;
D O I
10.1155/2015/575401
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We prepared magnetic thin films Ni81Fe19 on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19 and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19 thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm(3) with annealing temperature T-a = 400 degrees C, which is much higher than values of Ni81Fe19/Si(001) heterostructures with T-a ranging from 200 degrees C to 400 degrees C.
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页数:5
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