We prepared magnetic thin films Ni81Fe19 on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19 and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19 thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm(3) with annealing temperature T-a = 400 degrees C, which is much higher than values of Ni81Fe19/Si(001) heterostructures with T-a ranging from 200 degrees C to 400 degrees C.
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Kasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, ThailandKasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, Thailand
Thongdee, Supapich
Lekkla, Peerapat
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Kasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, ThailandKasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, Thailand
Lekkla, Peerapat
Supavasuthi, Chakkrit
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Western Digital Thailand Co Ltd, 140 Moo 2,BangPa In Ind Estate, Bangpa In 13160, Ayutthaya, ThailandKasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, Thailand
Supavasuthi, Chakkrit
Sreethawong, Thammanoon
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Western Digital Thailand Co Ltd, 140 Moo 2,BangPa In Ind Estate, Bangpa In 13160, Ayutthaya, ThailandKasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, Thailand
Sreethawong, Thammanoon
Jantaratana, Pongsakorn
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Kasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, ThailandKasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, Thailand
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Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Vutukuri, Sreenivasulu
Schad, Rainer
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Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Schad, Rainer
Alexander, Chet, Jr.
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Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Alexander, Chet, Jr.
Zangari, Giovanni
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Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
Univ Virginia, Ctr Electrochem Sci & Engn, Charlottesville, VA 22904 USAUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Zangari, Giovanni
Sorba, Lucia
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Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, ItalyUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Sorba, Lucia
Biasiol, Giorgio
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Area Ric Trieste, Ist Nazl Fis Mat, Lab Nazl Tecnol Avanzate & Nanosci, Trieste, ItalyUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Biasiol, Giorgio
Heun, Stefan
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Area Ric Trieste, Ist Nazl Fis Mat, Lab Nazl Tecnol Avanzate & Nanosci, Trieste, ItalyUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
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Columbia Univ, Mat Sci & Engn Program, Dept Appl Phys & Appl Math, New York, NY 10027 USAColumbia Univ, Mat Sci & Engn Program, Dept Appl Phys & Appl Math, New York, NY 10027 USA
Cheng, C.
Bailey, W. E.
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Columbia Univ, Mat Sci & Engn Program, Dept Appl Phys & Appl Math, New York, NY 10027 USAColumbia Univ, Mat Sci & Engn Program, Dept Appl Phys & Appl Math, New York, NY 10027 USA