Efficiency Enhancement of InGaP/InGaAs/Ge Solar Cells with Gradually Doped P-N Junction Active Layers

被引：0

作者：

Kim, Youngjo ^{[1
]}

Jung, Sang Hyun ^{[1
]}

Kim, Chang Zoo ^{[1
]}

Kim, Kangho ^{[1
,2
]}

Shin, Hyun-Beom ^{[1
]}

Park, Kyung Ho ^{[1
]}

Park, Won-Kyu ^{[1
]}

Lee, Jaejin ^{[2
]}

Kang, Ho Kwan ^{[1
]}

机构：

[1] Korea Adv Nano Fab Ctr, Suwon 16229, South Korea

[2] Ajou Univ, Dept Elect & Comp Engn, Suwon 16499, South Korea

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Graded doping techniques have been studied to improve the power conversion efficiency of the InGaP/InGaAs/Ge solar cells. We have investigated the efficiency enhancement of the triple-junction solar cells with gradually doped p-n junction active layers. The triple-junction epi-structures are grown by metalorganic chemical vapor deposition on Ge (100) substrates. The photovoltaic devices are fabricated and characterized under AM1.5 global illuminations. It was found that the graded doping profiles in InGaP emitter and InGaAs base layers can contribute to the efficiency improvement of the InGaP/InGaAs/Ge solar cells. The open circuit voltage and the short circuit current were improved up to 3.7 and 1.3 %, respectively, by employing the graded doping technique.

引用

页码：244 / 246

页数：3

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