Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

被引：51

作者：

Jacopin, Gwenole ^{[1
]}

Bugallo, Andres De Luna ^{[1
]}

Lavenus, Pierre ^{[1
]}

Rigutti, Lorenzo ^{[1
]}

Julien, Francois H. ^{[1
]}

Zagonel, Luiz F. ^{[2
,3
]}

Kociak, Mathieu ^{[2
]}

Durand, Christophe ^{[4
]}

Salomon, Damien ^{[4
,5
]}

Chen, Xiao Jun ^{[4
]}

Eymery, Joel ^{[4
]}

Tchernycheva, Maria ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France

[2] Univ Paris 11, CNRS, Lab Phys Solides, UMR 8502, F-91405 Orsay, France

[3] Ctr Nacl Pesquisa Energia & Mat, Lab Nacl Nanotecnol, BR-13083970 Campinas, SP, Brazil

[4] Univ Grenoble 1, INAC, Equipe Mixte Nanophys & Semicond, CEA CNRS,SP2M,UMR E CEA, F-38054 Grenoble 9, France

[5] CEA Leti, F-38054 Grenoble, France

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期

关键词：

NANOWIRE HETEROSTRUCTURES; SUBSTRATE;

D O I：

10.1143/APEX.5.014101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-wire light-emitting diodes based on radial p-i-n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst-free metal organic vapor phase epitaxy. The InxGa1-xN/GaN undoped QW system is coated over both the nonpolar lateral sidewalls and on the polar upper surface. Cathodo- and electroluminescence (EL) experiments provide evidence that the polar QWs emit in the visible spectral range at systematically lower energy than the nonpolar QWs. The EL of the polar or nonpolar QWs can be selectively activated by varying the sample temperature and current injection level. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[21] InGaN/GaN multi-quantum dot light-emitting diodes
Ji, LW
Su, YK
Chang, ST
Chang, CS
Wu, LW
Lai, WC
Du, XL
Chen, H
JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 114 - 118
[22] Spectra and quantum efficiency of light-emitting diodes based on GaN heterostructures with quantum wells
Yunovich, AE
Kudryashov, VE
Mamakin, SS
Turkin, AN
Kovalev, AN
Manyakhin, FI
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 125 - 130
[23] Electroluminescence properties of InGaN/AlGaN/GaN light emitting diodes with quantum wells
Yunovich, AE
Kudryashov, VE
Turkin, AN
Kovalev, AN
Manyakhin, FI
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
[24] Light-emitting devices based on semipolar-oriented InGaN/GaN quantum wells
Kawakami, Y.
Ueda, M.
Funato, M.
Narukawa, Y.
Mukai, T.
IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 2345 - +
[25] Advantages of InGaN/GaN Light-Emitting Diodes With GaN-InGaN Last Barrier
Cheng, Liwen
Yang, Jinpeng
Chen, Haitao
Wu, Shudong
JOURNAL OF DISPLAY TECHNOLOGY, 2016, 12 (06): : 594 - 598
[26] Light Extraction Efficiency Enhancement for InGaN Quantum Wells Light-Emitting Diodes with GaN Micro-Domes
Zhao, Peng
Han, Lu
Zhao, Hongping
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII, 2013, 8641
[27] Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
Li, Zhi
Kang, Junjie
Wang, Bo Wei
Li, Hongjian
Weng, Yu Hsiang
Lee, Yueh-Chien
Liu, Zhiqiang
Yi, Xiaoyan
Feng, Zhe Chuan
Wang, Guohong
JOURNAL OF APPLIED PHYSICS, 2014, 115 (08)
[28] Lateral carrier injection for the uniform pumping of several quantum wells in InGaN/GaN light-emitting diodes
Schiavon, Dario
Chlipala, Mikolaj
Perlin, Piotr
OPTICS EXPRESS, 2021, 29 (03) : 3001 - 3010
[29] Homogeneous In distribution of InGaN/GaN quantum wells in high performance GaN-based light-emitting devices
Kim, Hyunsoo
Lee, Sung-Nam
MECHANICAL SCIENCE AND ENGINEERING IV, 2014, 472 : 715 - +
[30] Electrical properties and luminescence spectra of light-emitting diodes with modulated doped InGaN/GaN quantum wells
Yunovich, AE
Mamakin, SS
Manyakhin, FI
Wattana, AB
Gardner, N
Goetz, W
Misra, M
Stockman, S
MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 71 - 75

← 1 2 3 4 5 →