Photoluminescence of porous-silicon/diamondlike-carbon-film structures subjected to rapid thermal annealing

被引：5
|
作者：
Rozhin, AG [1 ]
Klyui, NI
Piryatinskii, YP
Semenovich, VA
机构：
[1] Ukrainian Natl Acad Sci, Inst Semicond Phys, Kiev, Ukraine
[2] Ukrainian Natl Acad Sci, Inst Phys, Kiev, Ukraine
来源：
TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 04期
关键词：
D O I：
10.1134/1.1262460
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of rapid thermal annealing on the photoluminescence properties of porous-silicon/diamondlike-carbon-film structures is investigated. Redistribution of the radiation from the long-wavelength to the short-wavelength region is discovered. Models of the processes observed are presented. (C) 1999 American Institute of Physics. [S1063-7850(99)02004-2].
引用
收藏
页码：304 / 306
页数：3
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