Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs/based HEMT

被引：49

作者：

Lenka, T. R. ^{[1
]}

Panda, A. K. ^{[1
]}

机构：

[1] Natl Inst Sci & Technol, Berhampur 761008, Odisha, India

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 05期

关键词：

MOBILITY; POLARIZATION; SIMULATION; ALN/GAN; MODEL;

D O I：

10.1134/S1063782611050198

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature. DOI: 10.1134/S1063782611050198

引用

页码：650 / 656

页数：7

共 50 条

[31] MODELLING 2DEG CHARGES IN AlGaN/GaN HETEROSTRUCTURES
Longobardi, Giorgia
Udrea, Florin
Sque, Stephen
Croon, Jeroen
Hurkx, Fred
Napoli, Ettore
Sonsky, Jan
2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2012, 2 : 363 - 366
[32] Impact of a superlattice on electrical properties of AlGaN/GaN/sapphire 2DEG structures
Jakstas, V.
Janonis, V.
Biciunas, A.
Aleksiejunas, R.
Kadys, A.
Malinauskas, T.
Kasalynas, I.
19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, 647
[33] Investigation of Photoluminescence, Stimulated Emission, Photoreflectance, and 2DEG Properties of Double Heterojunction AlGaN/GaN/AlGaN HEMT Heterostructures Grown by Ammonia MBE
Lutsenko, Evgenii V.
Rzheutski, Mikalai V.
Vainilovich, Aliaksei G.
Svitsiankou, Illia E.
Tarasuk, Nikolai P.
Yablonskii, Gennadii P.
Alyamani, Ahmed
Petrov, Stanislav I.
Mamaev, Viktor V.
Alexeev, Alexey N.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (09):
[34] Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures
Abderrahmane, A.
Koide, S.
Tahara, T.
Sato, S.
Ohshima, T.
Okada, H.
Sandhu, A.
IRAGO CONFERENCE 2012, 2013, 433
[35] Computational model of 2DEG mobility in AlGaN/GaN heterostructures
Abgaryan, Karine
Mutigullin, Ilya
Reviznikov, Dmitry
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 4-5, 2015, 12 (4-5): : 460 - 465
[36] Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600 °C in oxidizing and inert environments
Hou, Minmin
Jain, Sambhav R.
So, Hongyun
Heuser, Thomas A.
Xu, Xiaoqing
Suria, Ateeq J.
Senesky, Debbie G.
JOURNAL OF APPLIED PHYSICS, 2017, 122 (19)
[37] AlGaN/GaN异质结2DEG载流子输运
姚微
曹俊诚
雷啸霖
功能材料与器件学报, 1999, (03) : 213 - 218
[38] Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect
Nifa, Iliass
Leroux, Charles
Torres, Alphonse
Charles, Matthew
Blachier, Denis
Reimbold, Gilles
Ghibaudo, Gerard
Bano, Edwige
MICROELECTRONIC ENGINEERING, 2017, 178 : 128 - 131
[39] Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics
Hahn, H.
Achenbach, J.
Ketteniss, N.
Noculak, A.
Kalisch, H.
Vescan, A.
SOLID-STATE ELECTRONICS, 2012, 67 (01) : 90 - 93
[40] A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD
Chen, Fangsheng
Chen, Hong
Deng, Zhen
Lu, Taiping
Fang, Yutao
Jiang, Yang
Ma, Ziguang
He, Miao
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 118 (04): : 1453 - 1457

← 1 2 3 4 5 →