Lattice-matched boronphosphide (BP)/hexagonal GaN heterostructure for inhibition of dislocation penetration

The crystallographic feature of a metal-organic CVD grown zinc-blende BP/wurtzite-GaN heterostructure was characterized utilizing high-resolution TEM and TED techniques. On the heterostructure system, the epitaxial relationship was revealed to be (0001), <a-axis>-GaN//(111), <110>-BP. (111)-BP was also found to be orientated in the "double positioning" with tracing hexagonal shape of (0001)-GaN probably because of the matching in the spacings between the a-axis of GaN (a = 0.319 nm) and the (110)-planes of BP (= 0.320 nm). (111)-BP was additionally recognized to stack in the c-direction of GaN with period of just half value of the c-axis (c = 0.518 nm). In addition to the matching property, (111)-BP joined with (0001)-GaN was found to be effective for annihilation of dislocations penetrating from the underneath GaN. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.