Extending the voltage window in the characterization of electrical transport of large-area molecular junctions

被引：7
|
作者：
Katsouras, Ilias [1 ]
Kronemeijer, Auke J. [1 ,2 ]
Smits, Edsger C. P. [3 ]
van Hal, Paul A. [4 ]
Geuns, Tom C. T. [4 ]
Blom, Paul W. M. [1 ,3 ]
de Leeuw, Dago M. [1 ,4 ]
机构：
[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[2] Univ Cambridge, Cavendish Lab, Optoelect Grp, Cambridge CB3 OHE, England
[3] Holst Ctr, NL-5605 KN Eindhoven, Netherlands
[4] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 01期
关键词：
SELF-ASSEMBLED MONOLAYERS; METAL JUNCTIONS; CONDUCTION; BREAKDOWN;
D O I：
10.1063/1.3608154
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A large bias window is required to discriminate between different transport models in large-area molecular junctions. Under continuous DC bias, the junctions irreversibly break down at fields over 9 MV/cm. We show that, by using pulse measurements, we can reach electrical fields of 35 MV/cm before degradation. The breakdown voltage is shown to depend logarithmically on both duty cycle and pulse width. A tentative interpretation is presented based on electrolysis in the polymeric top electrode. Expanding the bias window using pulse measurements unambiguously shows that the electrical transport exhibits not an exponential but a power-law dependence on bias. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3608154]
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页数：3
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