Weak field magnetoresistance of narrow-gap semiconductor InSb

被引：10

作者：

Yang, R. ^{[1
]}

Gao, K. H. ^{[1
,2
]}

Zhang, Y. H. ^{[1
]}

Chen, P. P. ^{[1
]}

Yu, G. ^{[1
]}

Wei, L. M. ^{[1
]}

Lin, T. ^{[1
]}

Dai, N. ^{[1
]}

Chu, J. H. ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 06期

基金：

中国国家自然科学基金;

关键词：

SPIN-ORBIT INTERACTION; QUANTUM-WELLS; THIN-FILMS; LOCALIZATION; SYSTEMS; ANTILOCALIZATION;

D O I：

10.1063/1.3559900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3559900]

引用

页数：5

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