The effect of Si and Ge on the elastic properties and plastic deformation modes in high- and medium-entropy alloys

被引:15
|
作者
Lizarraga, Raquel [1 ,5 ]
Li, Xiaojie [2 ]
Wei, Daixiu [3 ]
Vitos, Levente [1 ,4 ]
Li, Xiaoqing [1 ]
机构
[1] Royal Inst Technol KTH, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
[2] Taizhou Univ, Dept Phys, Taizhou 318000, Peoples R China
[3] Tohoku Univ, Inst Mat Res, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
[4] Uppsala Univ, Div Mat Theory, Dept Phys & Mat Sci, POB 516, SE-75120 Uppsala, Sweden
[5] Royal Inst Technol, Dept Ind Prod, SE-10044 Stockholm, Sweden
基金
匈牙利科学研究基金会; 瑞典研究理事会; 日本学术振兴会;
关键词
MECHANICAL-PROPERTIES; TENSILE PROPERTIES; ELECTRONIC-STRUCTURE; POTENTIAL MODEL; TOTAL-ENERGY; AL ADDITION; EVOLUTION; MICROSTRUCTURE; PERFORMANCE; STABILITY;
D O I
10.1063/5.0064939
中图分类号
O59 [应用物理学];
学科分类号
摘要
We employ quantum mechanics modeling to investigate the effects of Ge and Si solute elements on the elastic properties and plastic deformation modes in two families of high-entropy alloys, CoCrFeMnNi and CoCrFeNi, and medium-entropy alloy, CoCrNi. The static lattice constants and single-crystal elastic parameters are calculated for these three face-centered-cubic random solid solutions as a function of composition. Using the elastic constants, we analyzed mechanical stability, derived polycrystalline modulus, and evaluated solid-solution strengthening for these multi-component alloys. We fabricated (CoCrFeNi)(100-x) Si-x (x = 0, 4, 6) and measured the polycrystalline modulus and hardness. The calculated trends for Young's and shear modulus as well as lattice parameters were verified by our measurements. The dependence of generalized stacking fault energy on Ge and Si was studied in detail for the considered multi-component alloys. The competition between various plastic deformation modes was revealed based on effective energy barriers. Our calculations predict that the activated deformation modes in all the alloys studied here are the stacking fault mode (dominant) and the full-slip mode (secondary), and as the concentrations of Ge and Si increase, twining becomes favored. Published under an exclusive license by AIP Publishing.
引用
收藏
页数:7
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