Effect of erbium on electronic traps in PECVD-grown a-Si:H(Er)/c-Si structures

被引：1
|
作者：
Lysenko, VS
Tyagulskii, IP
Osiyuk, IN
Nazarov, AN
Vovk, YN
Gomenyuk, YV
Terukov, EI
Kon'kov, OI
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 06期
关键词：
D O I：
10.1134/1.1379390
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electrical properties and characteristics of defects in the upper part of the band in Er-doped a-Si:H grown by plasma-enhanced chemical vapor deposition were studied for the first time. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：621 / 626
页数：6
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