A 300 GHz 4th-Harmonic Mixer in 0.13 μm SiGe BiCMOS Technology

被引：0
|
作者：
Wang, Chen [1 ]
Hou, Debin [1 ]
Chen, Jixin [1 ]
Hong, Wei [1 ]
机构：
[1] Southeast Univ, Sch Informat Sci & Engn, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China
来源：
2018 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2018年
关键词：
Compact equivalent APDP; 4th-harmonic mixer; J-band; SiGe; THz;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A J-band wideband fourth-harmonically pumped mixer with low conversion loss using 0.13 mu m SiGe BiCMOS technology is reported. Compact equivalent anti-parallel-diode-pair (APDP) with minimized parasitic effect is investigated for conversion loss reduction. Driven by an external power amplifier with no less than 13 dBm LO power from 70 GHz to 85 GHz, the mixer exhibits measured up-conversion loss of 21-26 dB from 280 GHz to 325 GHz. Compared with other J-band mixers, this work achieves the lowest conversion loss with comparable IF bandwidth. The chip occupies 720 mu m x including the testing pads.
引用
收藏
页码：22 / 24
页数：3
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