Beam tests of a double-sided silicon strip detector with fast binary readout electronics before and after proton-irradiation

A double-sided silicon strip detector with a radiation-tolerant design was fabricated and characterized in a sequence of beam tests at KEK using 4 GeV/c pions. The detectors were combined with newly designed, fast, lower power, bipolar amplifier-shaper-discriminator chips and CMOS digital pipeline chips to record hit-no hit signals in the strips. Efficiencies, noise occupancies, and spatial resolutions were measured before and after the proton irradiation at an equivalent fluence of 1 x 10(14) p/cm(2), depending on angle of track incidence and strip-pitches. The median pulse height distribution, derived from the threshold scans of the efficiency, allowed to extract the response of the detector. A 1T magnetic field enabled us to determine the Hall mobilities of electrons and holes.