Structural, optical and photoelectrochemical properties of electrodeposited CdSe thin films

被引:28
|
作者
Lade, SJ [1 ]
Uplane, MD [1 ]
Uplane, MM [1 ]
Lokhande, CD [1 ]
机构
[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India
关键词
D O I
10.1023/A:1008966428339
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cadmium Selenide thin films have been electrodeposited from an acidic bath using CdSO4 as a cadmium source and SeO2 as a selenium source at pH = 3 on to stainless steel and fluorine-tin oxide coated glass substrates. The CdSe films have been characterized by X-ray diffraction, scanning electron microscopy and optical absorption. X-ray diffraction spectra showed that CdSe is polycrystalline;with single hexagonal phase. The intensity of the (002) peak increases remarkably by annealing in nitrogen atmosphere. A microstructural study revealed that the films were uniform and well covered the substrate. Optical absorption studies showed that the bandgap of the CdSe is 1.70 eV. It is observed that the conductivity of the CdSe films increases by annealing in nitrogen atmosphere. The photoelectrochemical activities of CdSe films deposited on stainless steel and fluorine-tin oxide coated glass have been studied by using CdSe / 1 M NaOH-1 M Na2S-1 MS / C cell configuration and it is found that films deposited on stainless steel give better performance, photoelectrochemical (PEC) studies also reveal that the CdSe has n-type conductivity.
引用
收藏
页码:477 / 482
页数:6
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