Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs

被引：4
|
作者：
Lakrimi, M
Rehman, J
Symons, DM
Nicholas, RJ
Mason, NJ
Walker, PJ
机构：
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[2] Max Planck Inst Festkorperforsch, High Field Magnet Lab, F-38042 Grenoble 9, France
[3] CNRS, F-38042 Grenoble 9, France
来源：
PHYSICA B-CONDENSED MATTER | 1998年 / 256卷
基金：
英国工程与自然科学研究理事会;
关键词：
InAs/GaSb; minigap; magnetotransport; semiconductor-semimetal;
D O I：
10.1016/S0921-4526(98)00496-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this system. When a parallel magnetic field is increased from 0 to 12 T, the resistivity drops by 60% when the Fermi energy is in the middle of the minigap, but by less ;than 3% when the Fermi energy is positioned outside the minigap. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：264 / 267
页数：4
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