Preparation of ferroelectric NaNbO3 thin films on MgO substrate by pulsed laser deposition

被引：0

作者：

Oda, S. ^{[1
]}

Saito, T. ^{[1
]}

Wada, T. ^{[1
]}

Adachi, H. ^{[2
]}

机构：

[1] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan

[2] ATR Lab, Matsushita Elect Ind Co Ltd, Kyoto 61902, Japan

来源：

2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/ISAF.2007.4393182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully fabricated good quality NaNbO3 films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO3 (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO3 filin was deposited. X-ray diffraction showed that the NaNbO3 film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The P-E hysteresis loop of the NaNbO3 filin was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO3 films epitaxially grown on (100)SrTiO3 substrate.

引用

页码：106 / +

页数：2

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