Properties of epitaxial ZnO thin films for GaN and related applications

被引：0
|
作者：
Shen, H
Wraback, M
Pamulapati, J
Liang, S
Gorla, C
Lu, Y
机构：
[1] USA, Res Lab, Sensors & Electron Devices Directorate, AMSRL SE EM, Adelphi, MD 20783 USA
[2] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08855 USA
来源：
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 1999年 / 4卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (11(2) over bar 0) ZnO//(01(1)over bar>2) Al2O3 and [0001] ZnO//[<0(1)over bar 11>] Al2O3 as confirmed by X-ray diffraction (theta-2 theta, and phi-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.
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页码：art. no. / G3.60
页数：5
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