Maskless and contactless patterned silicon deposition using a localized PECVD process

We present a novel technique to perform contactless and mask-free patterned plasma enhanced chemical vapour deposition and etching. When a powered electrode with narrow slits is placed very close to the substrate, plasma is selectively ignited within the slits due to the hollow cathode effect, and so deposition or etching occurs only within an area smaller than the size of the slit. This technique is demonstrated through the deposition of hydrogenated amorphous silicon using a gas mixture of hydrogen, argon and silane. Slits as small as 1 mm generate a plasma, and for this width, the lines deposited are about 750 mu m wide, homogenous over their length (60 mm), and are deposited at a rate of 50 nm min(-1). The phenomenon is studied using 2D Particle In Cell (PIC) modelling with a simplified argon chemistry. The electron localization observed in the PIC modelling provides an explanation of why the deposition is narrower than the slit.