Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping

被引：0
|
作者：
Poljak, M. [1 ]
Jovanovic, V. [2 ]
Suligoj, T. [1 ]
机构：
[1] Univ Zagreb, FER ZEMRIS, Zagreb 41000, Croatia
[2] Delft Univ Technol, DIMES, NL-2600 AA Delft, Netherlands
来源：
2011 IEEE INTERNATIONAL SOI CONFERENCE | 2011年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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