A High Gain 107 GHz Amplifier in 130 nm CMOS

被引：0

作者：

Momeni, Omeed ^{[1
]}

Afshari, Ehsan ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

2011 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2011年

关键词：

POWER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A systematic method to design high gain amplifiers at frequencies close to the f(max) of the transistors is introduced. This approach finds the optimum termination conditions to reach the maximum achievable gain of the device. Using this technique in a standard 130 nm CMOS process, we design and implement a 107 GHz amplifier with a gain of 12.5 dB, PAE of 4.4%, and saturated output power of >2.3 dBm, consuming 31 mW from a 0.95 V supply.

引用

页数：4

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