Abnormal temperature dependent behaviors of intersystem crossing and triplet-triplet annihilation in organic planar heterojunction devices

被引:25
|
作者
Xiang, Jie [1 ]
Chen, Yingbing [1 ]
Yuan, De [1 ]
Jia, Weiyao [1 ]
Zhang, Qiaoming [1 ]
Xiong, Zuhong [1 ]
机构
[1] Southwest Univ, Sch Phys Sci & Technol, MOE Key Lab Luminescence & Real Time Anal, Chongqing 400715, Peoples R China
基金
美国国家科学基金会;
关键词
LIGHT-EMITTING-DIODES; MAGNETO-ELECTROLUMINESCENCE; DELAYED FLUORESCENCE; HOST MATERIAL; OLEDS; PHOSPHORESCENT; GREEN; CONVERSION; TRANSPORT;
D O I
10.1063/1.4962297
中图分类号
O59 [应用物理学];
学科分类号
摘要
Anomalous temperature dependent magneto-electroluminescence was observed at low and high magnetic field strength from organic planar heterojunction devices incorporated common phosphorescent host materials of N, N'-dicarbazolyl-3,5-benzene (mCP) or 4,4'-N, N'-dicarbazole-biphenyl (CBP) as an emissive layer. We found that intersystem crossing became stronger with decreasing temperature and that triplet-triplet annihilation (TTA) occurred at room temperature but ceased at low temperature. Analyses of the electroluminescence spectra of these devices and their temperature dependences indicated that the population of exciplex states increased at low temperature, which caused the abnormal behavior of intersystem crossing. Additionally, long lifetime of the excitons within mCP or CBP layer may allow TTA to occur at room temperature, while the reduced population of excitons at low temperature may account for the disappearance of TTA even though the excitons had increased lifetime. Published by AIP Publishing.
引用
收藏
页码:181 / 185
页数:5
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