A temperature-dependent current model for pHEMT on GaAs

被引：2
|
作者：
Wang, L. [1 ]
Xu, R. M. [1 ]
Guo, Y. C. [1 ]
Yan, B. [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 610054, Peoples R China
来源：
JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS | 2008年 / 22卷 / 01期
关键词：
D O I：
10.1163/156939308783122779
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modified current model has been developed to more accurately model the current-voltage characteristics of GaAs pHEMTs over a wide range of temperature. In particular, the modeling accuracy of knee, saturation and subthreshold regions has been greatly improved. These results are achieved by introducing the polynomial expression on the bias conditions. The verification is performed by fabricated pHEMTs at different temperature. Good agreement is obtained.
引用
收藏
页码：39 / 46
页数：8
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