Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

被引：1

作者：

Su, Yi-En ^{[1
,2
]}

Wen, Yu-Chieh ^{[1
,2
]}

Hong, Yu-Liang ^{[3
]}

Lee, Hong-Mao ^{[3
]}

Gwo, Shangjr ^{[3
]}

Lin, Yuan-Ting ^{[4
]}

Tu, Li-Wei ^{[4
]}

Liu, Hsiang-Lin ^{[5
]}

Sun, Chi-Kuang ^{[1
,2
,6
,7
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[5] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan

[6] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[7] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期

关键词：

energy gap; Hall effect; hole density; indium compounds; infrared spectra; magnesium; phonons; semiconductor growth; wide band gap semiconductors; RELAXATION; GAAS; SEMICONDUCTORS; RATES;

D O I：

10.1063/1.3591974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN. (C) 2011 American Institute of Physics. [doi:10.1063/1.3591974]

引用

页数：3

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