Cd desorption induced by Zn exposure during atomic layer epitaxy of CdxZn1-xTe

被引：4
|
作者：
Larramendi, EM [1 ]
de Melo, O
Hernández-Calderón, I
机构：
[1] Univ Havana, Fac Phys, Havana, Cuba
[2] Inst Politecn Nacl, CINVESTAV, Dept Phys, Mexico City 07000, DF, Mexico
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 09期
关键词：
D O I：
10.1002/pssb.200461730
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The substitution of surface Cd atoms by Zn atoms during the growth of CdxZn1-xTe by atomic layer epitaxy has been studied as a function of substrate temperature and Zn exposure time by means of the analysis of the photoluminescence spectra of CdxZn1-xTe/ZnTe quantum wells. For substitution and desorption of Cd induced by Zn exposure an activation energy of 1.5 eV was found. The complexity of this desorption process was denoted by the fourth order of the kinetic reaction in the 250-280 degrees C temperature range. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1946 / 1950
页数：5
相关论文
共 35 条
  • [1] Optical properties of CdxZn1-xTe epilayers grown by molecular-beam epitaxy
    Shih, Y.T. (ytshih@cc.ncue.edu.tw), 1600, American Institute of Physics Inc. (94):
  • [2] Dependence of the optical properties on the Cd mole fraction in CdxZn1-xTe/GaAs heterostructures
    Kim, TW
    Chung, SW
    Park, HL
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1997, 16 (07) : 573 - 576
  • [3] Dependence of the structural and optical properties on the Cd mol fraction in CdxZn1-xTe/GaAs heterostructures
    Oh, SH
    Jang, MS
    Park, HL
    Lee, DU
    Choo, DC
    Kim, TW
    MATERIALS RESEARCH BULLETIN, 2001, 36 (10) : 1881 - 1887
  • [4] The growth of the CdxZn1-xTe epilayers by low-pressure metalorganic vapor-phase epitaxy
    Zhang, ZZ
    Shen, DZ
    Shan, CX
    Zhang, JY
    Lu, YM
    Liu, YC
    Fan, XW
    THIN SOLID FILMS, 2003, 429 (1-2) : 211 - 215
  • [5] Improvement of the crystallinity of a CdxZn1-xTe epitaxial film grown on a GaAs substrate using a ZnTe buffer layer
    Kim, TW
    Park, HL
    Lee, JY
    APPLIED SURFACE SCIENCE, 1997, 108 (01) : 127 - 131
  • [6] The role and mechanism of a ZnTe buffer layer on the structural properties of the strained CdxZn1-xTe/ZnTe double quantum wells
    Kim, TW
    Lee, DU
    Lim, YS
    Lee, JY
    Park, HL
    SOLID STATE COMMUNICATIONS, 1998, 106 (03) : 153 - 156
  • [7] Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1-xTe epilayers grown on GaAs substrates
    Kim, TW
    Lee, DU
    Choo, DC
    Lee, HS
    Lee, JY
    Park, HL
    APPLIED PHYSICS LETTERS, 2001, 78 (07) : 922 - 924
  • [8] Structural and optical properties of CdxZn1-xTe/ZnTe quantum dots grown on Si(100) substrates by using molecular beam epitaxy
    Lee, H. S.
    Park, H. L.
    Kim, T. W.
    JOURNAL OF CRYSTAL GROWTH, 2006, 292 (01) : 10 - 13
  • [9] Formation of the CuPt-type ordered structure in CdxZn1-xTe epilayer grown on ZnTe buffer layer on (001) GaAs substrate
    Lee, HS
    Kwon, MS
    Lee, JY
    Kim, TW
    Park, HL
    JOURNAL OF MATERIALS SCIENCE LETTERS, 2003, 22 (18) : 1263 - 1267
  • [10] Interaction between Zn and Cd atoms during the atomic layer epitaxy growth of CdZnTe/ZnTe quantum wells
    Larramendi, EM
    López-Luna, E
    De Melo, O
    Hernández-Calderón, I
    SURFACE REVIEW AND LETTERS, 2002, 9 (5-6) : 1725 - 1728
1234