Impact of the Ferroelectric and Interface Layer Optimization in an MFIS HZO based Ferroelectric Tunnel Junction for Neuromorphic based Synaptic Storage

被引：6

作者：

Ali, Tarek ^{[1
]}

Suenbuel, Ayse ^{[1
]}

Mertens, Konstantin ^{[1
]}

Revello, Ricardo ^{[1
]}

Lederer, Maximilian ^{[1
]}

Lehninger, David ^{[1
]}

Mueller, Franz ^{[1
]}

Kuehnel, Kati ^{[1
]}

Rudolph, Matthias ^{[1
]}

Oehler, Sebastien ^{[1
]}

Hoffmann, Raik ^{[1
]}

Zimmermann, Katrin ^{[1
]}

Biedermann, Kati ^{[1
]}

Schramm, Philipp ^{[1
]}

Czernohorsky, Malte ^{[1
]}

Seidel, Konrad ^{[1
]}

Kaempfe, Thomas ^{[1
]}

Eng, Lukas M. ^{[2
]}

机构：

[1] Fraunhofer IPMS Ctr Nanoelect Technol, Bartlake Str 5, D-01109 Dresden, Germany

[2] Tech Univ Dresden, Inst Angew Phys, Nothnitzer Str 61, D-01187 Dresden, Germany

来源：

2021 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2021年

关键词：

Ferroelectric; HZO; MFIS; FTJ; synaptic device;

D O I：

10.1109/SNW51795.2021.00032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stack structure tuning of the ferroelectric tunnel junction (FTJ) devices is reported based on the ferroelectric (FE) layer thickness and interface layer (IL) type/thickness optimization to maximize the FTJ I-on/I-off ratio. A FE thickness scaling shows a low voltage FTJ operation, further challenged by a diminishing trend in the maximum I-on/I-off ratio due to the thickness dependence of the FE polarization, independent of the IL thickness. The maximum I-on/I-off ratio varies by tuning the IL type (SiO2, Al2O3) and thickness (1 nm, 2 nm), indicating a maximum at the SiO2 (1 nm) IL condition. A stable endurance of 10(4) cycles is limited by the high field/cycles induced IL degradation, a stable FTJ at 10y extrapolated retention time is shown. The FTJ synaptic device operation is reported with insight on the stack structure tuning impact on the synaptic LTP/LTD nonlinearity and maximum dynamic range.

引用

页码：61 / 62

页数：2

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