Quantum simulation of a junctionless carbon nanotube field-effect transistor under torsional strain

In this paper, a MOS-like junctionless carbon nanotube field effect transistor (JL-CNTFET) has been investigated. Energy band-gap and density of states (DOS) of carriers are two major parameters which are changed according to the torsional strain and affected the performance of JL-CNTFET. In this study, the effects of torsional strain on the analog (i.e., unity gain frequency (f(T)), transconductance (g(m)) and output resistance (r(out))) and digital (i.e., OFF current, am-bipolar) characteristics of the device and also the switching behavior of the device have been studied and discussed. The simulation has been done using the non-equilibrium Green's function (NEGF) approach. The results show that torsional strain exerts significant effects on the electrical properties of the device and considering the multiple application of this transistor, it can also be used to improve the electrical properties of the transistor in specific applications.