Improvement of Cu(In,Ga)Se2 solar cell performance by thiourea treatment

被引：0

作者：

Nakada, Kazuyoshi ^{[1
]}

Watanabe, Motoki ^{[2
]}

Nishimura, Takahito ^{[2
,3
]}

Suyama, Naoki ^{[1
]}

Yamada, Akira ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan

[3] Ritsumeikan Univ, Ritsumeikan Global Innovat Res Org, 1-1-1 Nojihigashi, Kusatsu, Shiga 5258577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 03期

关键词：

THIN-FILMS; SURFACE; POLYCRYSTALLINE; CUINSE2; SULFUR;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of a thiourea treatment performed to the absorber of Cu(In,Ga)Se-2 (CIGS) solar cells. The thiourea treatment successfully improved the open-circuit voltage, fill factor, and conversion efficiency of the solar cells. Reduced ideality factor and reverse saturation current density demonstrated that the suppression of carrier recombination contributed to the improvement in solar cell performance. Increased intensity in cross-sectional electron-beam-induced current measurements confirmed the improved film quality with the thiourea treatment. Additionally, an enhanced carrier density observed with the treatment suggests the passivation of donor-type defects. These results indicate that the thiourea treatment is promising to improve the absorber quality and enhance the performance of CIGS solar cells.

引用

页数：6

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