Direct determination of Debye temperature and electron-phonon interaction in 1T-VSe2 -: art. no. 073107

被引：20

作者：

Kamarchuk, GV

Khotkevich, AV

Bagatsky, VM

Ivanov, VG

Molinié, P

Leblanc, A

Faulques, E

机构：

[1] B Verkin Inst Low Temp Phys & Engn, UA-61164 Kharkov, Ukraine

[2] Univ Sofia, Fac Phys, BG-1164 Sofia, Bulgaria

[3] Inst Mat Jean Rouxel, Lab Chim Solides, F-44322 Nantes, France

[4] Inst Mat Jean Rouxel, Lab Phys Cristalline, F-44322 Nantes, France

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.63.073107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystals of the layered two-dimensional transition-metal dichalcogenide 1 T-VSe2 are investigated by point-contact spectroscopy in the charge-density wave state. Relevant characteristics such as mean, root-mean-square, and Debye phonon frequencies are obtained. The Debye temperature is Theta (D) = 220 +/- 5 K, close to that of 2H-NbSe2. The point-contact function g(pc)(omega) of the electron-phonon interaction reveals a moderate coupling constant lambda (pc) = 0.27. Consequently, the Coulomb potential, the density of states at the Fermi level, and the deformation potential are estimated to be of order 0.22 eV, 2.5 states/eV, and 0.22 eV/Angstrom, respectively.

引用

页数：4

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