Direct determination of Debye temperature and electron-phonon interaction in 1T-VSe2 -: art. no. 073107

被引：20
|
作者：
Kamarchuk, GV
Khotkevich, AV
Bagatsky, VM
Ivanov, VG
Molinié, P
Leblanc, A
Faulques, E
机构：
[1] B Verkin Inst Low Temp Phys & Engn, UA-61164 Kharkov, Ukraine
[2] Univ Sofia, Fac Phys, BG-1164 Sofia, Bulgaria
[3] Inst Mat Jean Rouxel, Lab Chim Solides, F-44322 Nantes, France
[4] Inst Mat Jean Rouxel, Lab Phys Cristalline, F-44322 Nantes, France
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.63.073107
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Crystals of the layered two-dimensional transition-metal dichalcogenide 1 T-VSe2 are investigated by point-contact spectroscopy in the charge-density wave state. Relevant characteristics such as mean, root-mean-square, and Debye phonon frequencies are obtained. The Debye temperature is Theta (D) = 220 +/- 5 K, close to that of 2H-NbSe2. The point-contact function g(pc)(omega) of the electron-phonon interaction reveals a moderate coupling constant lambda (pc) = 0.27. Consequently, the Coulomb potential, the density of states at the Fermi level, and the deformation potential are estimated to be of order 0.22 eV, 2.5 states/eV, and 0.22 eV/Angstrom, respectively.
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页数：4
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