Stoner Ferromagnetism in Hole-Doped CuMIIIAO2 with MIIIA = Al, Ga, and In

被引:2
|
作者
Iordanidou, Konstantina [1 ]
Persson, Clas [1 ]
机构
[1] Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, N-0316 Oslo, Norway
基金
芬兰科学院;
关键词
CuAlO2; hole doping; defects; ferromagnetism; first-principles; ROOM-TEMPERATURE FERROMAGNETISM; TOTAL-ENERGY CALCULATIONS; ELECTRONIC-STRUCTURE; MAGNETIC-PROPERTIES; TRANSPARENT; SEMICONDUCTORS; TRANSITION; FE; CAO;
D O I
10.1021/acsami.1c00403
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using density functional theory calculations, we examine the effect of hole doping on the magnetic and electronic properties of (CuMO2)-O-IIIA, with M-IIIA = Al, Ga, and In. (CuMO2)-O-IIIA nonmagnetic semiconductors switch to ferromagnetic half-metals upon hole doping. For CuAlO2, the nonmagnetic-to-ferromagnetic transition occurs for hole densities of similar to 7 x 10(19)/cm(3). Ferromagnetism arises from an exchange splitting of the electronic states at the valence band edge, and it can be attributed to the highlying Cu-d states. Hole doping induced by cation vacancies and substitutional divalent dopants is also investigated. Interestingly, both vacancies and nonmagnetic divalent dopants result in the emergence of ferromagnetism.
引用
收藏
页码:29770 / 29779
页数:10
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