Low-voltage, low-power, high linearity front-end thermal sensing element

被引：4
|
作者：
Crepaldi, P. C. [1 ]
Moreno, R. L. [1 ]
Pimenta, T. C. [1 ]
机构：
[1] Univ Fed Itajuba, Microelect Grp, BR-3750903 Itajuba, MG, Brazil
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 18期
关键词：
D O I：
10.1049/el.2010.1346
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A CMOS implementation of a low-voltage, low-power, high linearity front-end thermal sensing element is described. It is based on CMOS transistors operating in weak inversion. The power supply can be as low as 0.8 V and the power consumption is less than 100 nW. The inaccuracy (3 sigma) is about +/- 0.24 degrees C at room temperature and the linearity (fitting index R-2) is greater than 0.99. These features make the sensor suitable for biomedical applications.
引用
收藏
页码：1271 / 1272
页数：2
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