Dispersive sensing of charge states in a bilayer graphene quantum dot

被引:13
|
作者
Banszerus, L. [1 ,2 ,3 ]
Moeller, S. [1 ,2 ,3 ]
Icking, E. [1 ,2 ,3 ]
Steiner, C. [1 ,2 ]
Neumaier, D. [4 ]
Otto, M. [4 ]
Watanabe, K. [5 ]
Taniguchi, T. [6 ]
Volk, C. [1 ,2 ,3 ]
Stampfer, C. [1 ,2 ,3 ]
机构
[1] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany
[2] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany
[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
[4] AMO GmbH, Gesell Angew Mikro & Optoelekt, D-52074 Aachen, Germany
[5] Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[6] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
基金
欧洲研究理事会; 欧盟地平线“2020”;
关键词
37;
D O I
10.1063/5.0040234
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280MHz is directly coupled to an Ohmic contact of the quantum dot device. The detection scheme based on changes in the quantum capacitance operates over a wide gate-voltage range and allows us to probe excited states down to the single-electron regime. Crucially, the presented sensing technique avoids the use of an additional, capacitively coupled quantum device such as a quantum point contact or single electron transistor, making dispersive sensing particularly interesting for gate-defined graphene quantum dots.
引用
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页数:5
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