Y1Ba2Cu3O7-x multilayer structures with a thick SiO2 interlayer for multichip modules

For high temperature superconducting multichip modules and other related electronic applications, it is necessary to be able to fabricate several Y1Ba2CU3O7-x (YBCO) layers separated by thick low dielectric constant dielectric layers. In this work, we report the successful fabrication of YBCO/YSZ/Si-O2 (1-2 mu m)/YSZ/YBCO multilayer structures on single crystal yttria stabilized zirconia (YSZ) substrates. In contrast to previously reported work, the top YBCO layer did not show any cracking. This is due to a technique that allows for stress relief in the SiO2 layer before the second YBCO layer is deposited. The top YBCO layer in our multilayer structure had T-c = 57 K and J(c) = 10(5) A/cm(2) (at 77 K), whereas the bottom YBCO layer had T-c = 90 K and J(c) = 1.2 x 10(6) A/cm(2) (at 77 K). We also showed that the quality of the bottom YBCO layer was preserved during the fabrication of the multilayer due to the annealing process during which O-2 diffused into the YBCO, replacing the O-2 lost during the deposition of the top YBCO layer.