Local Energy Landscape Drives Long-Range Exciton Diffusion in Two-Dimensional Halide Perovskite Semiconductors

被引:14
|
作者
Baldwin, Alan [1 ,2 ]
Delport, Geraud [1 ]
Leng, Kai [3 ]
Chahbazian, Rosemonde [1 ]
Galkowski, Krzysztof [1 ,4 ]
Loh, Kian Ping [5 ]
Stranks, Samuel D. [1 ,2 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Univ Cambridge, Dept Chem Engn & Biotechnol, Cambridge CB3 0HE, England
[3] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[4] Nicolaus Copernicus Univ, Fac Phys Astron & Informat, Inst Phys, PL-87100 Torun, Poland
[5] Natl Univ Singapore, Dept Chem, Singapore, Singapore
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2021年 / 12卷 / 16期
基金
英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
CARRIER DIFFUSION; EMISSION; DYNAMICS; STATES;
D O I
10.1021/acs.jpclett.1c00823
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Halide perovskites are versatile semiconductors with applications including photovoltaics and light-emitting devices, having modular optoelectronic properties realizable through composition and dimensionality tuning. Layered Ruddlesden-Popper perovskites are particularly interesting due to their unique 2D character and charge carrier dynamics. However, long-range energy transport through exciton diffusion in these materials is not understood or realized. Here, local time-resolved luminescence mapping techniques are employed to visualize exciton transport in exfoliated flakes of the BA(2)MA(n-1)Pb(n)I(3n+1) perovskite family. Two distinct transport regimes are uncovered, depending on the temperature range. Above 100 K, diffusion is mediated by thermally activated hopping processes between localized states. At lower temperatures, a nonuniform energy landscape emerges in which transport is dominated by downhill energy transfer to lower-energy states, leading to long-range transport over hundreds of nanometers. Efficient, long-range, and switchable downhill transfer offers exciting possibilities for controlled directional long-range transport in these 2D materials for new applications.
引用
收藏
页码:4003 / 4011
页数:9
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