A Case Study of High Temperature Pass Analysis Using Thermal Laser Stimulation Technique

被引：0
|
作者：
Lin, Hung Sung [1 ]
Wu, Mong Sheng [1 ]
机构：
[1] United Microelect Corp Ltd, Hsinchu 300, Taiwan
来源：
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年
关键词：
temperature; TLS; NIR; thermal; laser;
D O I：
10.1109/IRPS.2010.5488717
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The intrinsic carrier concentration n(i) is highly temperature dependent in non-degenerate semiconductors. At high temperatures, thermally generated electron-hole pairs contribute to the carrier concentrations. As a result, the generation of free carriers can be achieved through light-to-heat conversion using near-infrared (NIR) laser. This paper describes the use of the thermal laser stimulation (TLS) technique to modify the electrical properties of a heated passive device so that the direct failure location can be revealed in order to clarify the cause of the iddq leakage that will disappear during high temperature tests.
引用
收藏
页码：870 / 873
页数：4
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