MESFET noise modeling by using explicit relations for three equivalent temperatures

MESFET noise modeling based on "H" representation of intrinsic equivalent circuit and two noise sources is considered in this paper. The correlation between two noise sources is taken into account in an original way, introducing the third equivalent temperature with complex value, named "correlation temperature". Further, the explicit relations for gate, drain and correlation temperatures in terms of intrinsic equivalent circuit elements and intrinsic circuit noise parameters are derived. Then, the expressions giving noise parameter dependence on three equivalent temperatures, frequency and transistor intrinsic circuit elements are established. On the basis of that model the simple MESFET noise parameter prediction of entire transistor circuit is performed by using a standard circuit simulator.