Microwave absorption/reflection and magneto-transport experiments on high-mobility electron gas

被引:19
|
作者
Studenikin, SA [1 ]
Potemski, M
Sachrajda, AS
Hilke, M
Pfeiffer, LN
West, KW
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] GHMFL, MPI FKF, F-38042 Grenoble, France
[3] CNRS, F-38042 Grenoble, France
[4] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
[5] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
cyclotron resonance; magnetoresistance; microwaves; two-dimensional electron gas (2DEG); zero-resistance state;
D O I
10.1109/TNANO.2004.840137
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have performed simultaneous measurements of microwave absorption/reflection and magneto-transport characteristics of a high-mobility two-dimensional electrons in GaAs-AlGaAs heterostructure in the regime of microwave-induced resistance oscillations (MIROs). It is shown that the electrodynamic aspect of the problem is important in these experiments. In the absorption experiments, a broad cyclotron resonance line was observed due to a large reflection from the highly conductive electron gas. There were no additional features observed related to absorption at harmonics of the cyclotron resonance. In near-field reflection experiments, a very different oscillation pattern was revealed when compared to MIROs. The oscillation pattern observed in the reflection experiments is probably due to plasma effects occurring in a finite-size sample. The whole microscopic picture of MIROs is more complicated than simply a resonant absorption at harmonics of the cyclotron resonance. Nevertheless, the experimental observations are in good agreement with the model by Ryzhii et al involving the photo-assisted scattering in the presence of a crossed magnetic field and de bias. The observed damping factor of MIROs may be attributed to a change in the electron mobility as a function of temperature.
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页码:124 / 131
页数:8
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