Temperature-dependent decay dynamics in highly mismatched ZnSe1-xTex alloy

被引:4
|
作者
Lin, Yan-Cheng [1 ]
Jiang, Wei-Shi [1 ]
Chou, Wu-Ching [1 ]
Chen, Wei-Kuo [1 ]
Chang, Wen-Hao [1 ]
Chia, Chin-Hau [2 ]
Chen, Cheng-Yu [3 ]
Chyi, Jen-Inn [3 ]
机构
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[2] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 81148, Taiwan
[3] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan
关键词
SEMICONDUCTOR ALLOYS; BAND-GAP;
D O I
10.1063/1.3687187
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study investigates the temperature-dependent decay dynamics in highly mismatched ZnSe0.950Te0.050 alloy using photoluminescence (PL) and time-resolved PL spectroscopy. The PL peak energy exhibits a V-shaped dependence on temperature (10-300 K), indicating strong carrier localization. Kohlrausch's stretched exponential law, in which the deduced stretching exponent beta is highly consistent with the V-shaped PL peak shift, closely corresponds to the complex decay curves over a wide temperature range. Additionally, the PL lifetime tau initially increases and then monotonically declines as the temperature increases. These findings agree excellently with the low electron-hole binding energy upon thermal ionization of weakly bound electrons. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687187]
引用
收藏
页数:4
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