Precise characterization of physical properties in nanometer-scale materials is interesting not only in terms of low-dimensional physics but also in application to devices. Due to the reduced dimensionality and symmetry, these systems possess various interesting properties that cannot be found in the bulk. In this article, focusing on epitaxial ultrathin bismuth films formed on a silicon substrate, we introduce an intriguing interplay of the quantum size and Rashba effects in reciprocal space. Utilizing spin- and angle-resolved photoemission spectroscopy, we observed clear Rashba-split nature of the surface-state bands in these Bi films. However, the band dispersion did not follow the simple Rashba picture and the spin-splitting was lost where they overlapped with the bulk projection. From first-principles calculations, this is explained as a change in the nature of the band-splitting into an even-odd splitting induced by the quantum size effect. (C) 2014 Elsevier B.V. All rights reserved.
机构:Zhengzhou Univ, Int Lab Quantum Funct Mat Henan, Zhengzhou 450001, Peoples R China
Wu Ming-Yi
Jia Yu
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机构:Zhengzhou Univ, Int Lab Quantum Funct Mat Henan, Zhengzhou 450001, Peoples R China
Jia Yu
Sun Qiang
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Zhengzhou Univ, Int Lab Quantum Funct Mat Henan, Zhengzhou 450001, Peoples R ChinaZhengzhou Univ, Int Lab Quantum Funct Mat Henan, Zhengzhou 450001, Peoples R China
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Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Hirahara, T.
Miyamoto, K.
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Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Miyamoto, K.
Kimura, A.
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Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Kimura, A.
Niinuma, Y.
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Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Niinuma, Y.
Bihlmayer, G.
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Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, GermanyUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Bihlmayer, G.
Chulkov, E. V.
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DIPC, San Sebastian 20018, Spain
Univ Basque Country, Dept Fis Mat, San Sebastian 20080, SpainUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Chulkov, E. V.
Nagao, T.
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Natl Inst Mat Sci, Nano Syst Funct Ctr, Tsukuba, Ibaraki 3050044, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Nagao, T.
Matsuda, I.
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Inst Solid State Phys, Chiba 2778581, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Matsuda, I.
Qiao, S.
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Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Qiao, S.
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Shimada, K.
Namatame, H.
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Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Namatame, H.
Taniguchi, M.
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Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan
Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
Taniguchi, M.
Hasegawa, S.
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Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, JapanUniv Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan