Silicon diode radiation hardening for high energy physics detectors

被引：2

作者：

Rando, R

Candelori, A

Bisello, D

Kaminski, A

Litovchenko, A

Pantano, D

Stavitski, I

Wyss, J

机构：

[1] Univ Padua, Dipartimento Fis, I-35100 Padua, Italy

[2] Ist Nazl Fis Nucl, Sez Padova, I-35100 Padua, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 514卷 / 1-3期

关键词：

neutron; proton; radiation effects; silicon detectors;

D O I：

10.1016/j.nima.2003.08.084

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We summarize in a general review all the studies performed by our group in the last years in the field of radiation hardening of silicon detectors for High Energy Physics experiments. Test structures (silicon p-i-n diodes) were irradiated by 16 MeV, 27 MeV, 34 MeV and 24 GeV protons, and by fast neutrons from a nuclear reactor and from the Be-9(d,n)B-10 nuclear reaction. We will show that after proton irradiation the substrate oxygenation mitigates the depletion voltage increase rate beta, which nevertheless presents a wide range of values if standard and oxygenated devices processed by different manufacturers are considered, pointing out that besides oxygenation, processing affects the diode radiation hardness in the case of proton irradiation. After neutron irradiation though the oxygen mitigating effect is strongly suppressed, nonetheless the beta dependence on the particular process can be important. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：62 / 68

页数：7

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