Circuit Development of FGMOS in Operational Amplifier for Low Voltage Low Power Applications: A Review

被引：0

作者：

Musa, F. A. S. ^{[1
]}

Nurulain, D. ^{[1
]}

Ahmad, N. ^{[1
]}

Isa, M. Mohamad ^{[1
]}

Ramli, Muhammad M. ^{[1
]}

机构：

[1] Univ Malaysia Perlis, Sch Microelect Engn, Arau 02600, Perlis, Malaysia

来源：

3RD ELECTRONIC AND GREEN MATERIALS INTERNATIONAL CONFERENCE 2017 (EGM 2017) | 2017年 / 1885卷

关键词：

D O I：

10.1063/1.5002465

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

As a result of increasing demand for compact electronic device, Floating Gate MOSFET (FGMOS) is implemented into operational amplifier. It can help to scale down the device dimensions as well as the supply voltage. This design technique enable the control of threshold voltage and reduce the complexity of a circuit. The objective of this paper is to review the design of an operational amplifier with certain criteria such as low supply voltage less than 1 V, high bandwidth and low power consumption. From the reviewed results of previous works, it can be concluded the best circuit design of FGMOS based operational amplifier in means for low voltage and power consumption is proposed by Mourabit A El. et al., where the circuit can be operated at 1.5 V for voltage supply and consume power at the value of 2 mu W.

引用

页数：8

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