Electrical Properties of MoS2 Field-Effect Transistors in Contact with Layered CrPS4

被引：3

作者：

Shin, Minjeong ^{[1
]}

Lee, Mi Jung ^{[1
]}

Lee, Ji Hye ^{[1
]}

Park, Bae Ho ^{[1
]}

Lee, Sungmin ^{[2
,3
]}

Park, Je-Geun ^{[2
,3
]}

机构：

[1] Konkuk Univ, Div Quantum Phase & Devices, Dept Phys, Seoul 05029, South Korea

[2] Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2020年 / 76卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

MoS2; CrPS4; Heterostructure; FET; Dual-gated; HEXAGONAL BORON-NITRIDE;

D O I：

10.3938/jkps.76.731

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the enhanced electrical performance of a MoS2 field-effect transistor (FET) by using a contact with a layered CrPS4. Our transport measurements revealed that MoS2 channel with CrPS4 junction showed higher mobility of 33.9 cm(2)/Vs than that without CrPS4 junction on SiO2/Si substrate. We also fabricated a MoS2 FET with a top gate insulator, CrPS4, which showed low leakage current of 10(-11) A and high on/off ratio of 10(5). In a dual-gated FET with SiO2 bottom gate insulator and CrPS4 top gate insulator, much decreased sub-threshold swing of 0.70 V/dec was obtained.

引用

页码：731 / 735

页数：5

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