Self-assembled GaAs local artificial substrates on Si by droplet epitaxy

被引：6
|
作者：
Bietti, S. [1 ,2 ]
Somaschini, C. [1 ,2 ]
Koguchi, N. [1 ,2 ]
Frigeri, C. [3 ]
Sanguinetti, S. [1 ,2 ]
机构：
[1] L NESS, I-20125 Milan, Italy
[2] Dipartimento Sci Mat, I-20125 Milan, Italy
[3] Ist CNR IMEM, I-43100 Parma, Italy
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期
关键词：
Nanostructures; Molecular beam epitaxy; Semiconductors silicon; Semiconductors gallium arsenide; ISLANDS; GROWTH; HETEROEPITAXY; SI(001);
D O I：
10.1016/j.jcrysgro.2010.12.036
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The fabrication of submicrometer GaAs islands directly on Si substrates by droplet epitaxy is presented. Islands parameters, like density and size, are fully controlled through growth temperature and Ga coverage. The process is fully scalable and at low thermal budget, making these islands good candidates for local artificial substrates with lattice parameters, band alignment and crystalline quality as now required for the implementation of high quality III-As devices on Si. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：267 / 270
页数：4
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