A 12-bit cryogenic and radiation-tolerant digital-to-analog converter for aerospace extreme environment applications

被引:15
|
作者
Yao, Yuan [1 ]
Dai, Foster [1 ]
Jaeger, Richard C. [1 ]
Cressler, John D. [2 ]
机构
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
基金
美国国家航空航天局;
关键词
bandgap reference (BGR); digital-to-analog converter (DAC); radiation tolerance; silicon germanium (SiGe); ultrawide temperature (UWT);
D O I
10.1109/TIE.2008.924174
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents an 80-MHz 12-bit cryogenic low-power digital-to-analog converter (DAC) implemented in a 0.5-mu m SiGe BiCMOS technology. The cryogenic DAC is capable of operating over an ultrawide temperature (UWT) ranging from -180 degrees C to +120 degrees C and under the high-energy particle radiation environment on the lunar surface. A bandgap voltage reference for the UWT applications is designed using SiGe heterojunction bipolar transistors, and the current-steering DAC is implemented using a segmented current source array. The design considerations for both extreme temperature and radiation environments are discussed. The cryogenic and radiation-tolerant DAC chip occupies a die area of 3.5 x 1.8 mm(2) and consumes only 39.6 mW from a3.3-V supply voltage. The maximum DAC sampling rate was measured at 80 MS/s at -180 degrees C using a 40-pin dual in-line package.
引用
收藏
页码:2810 / 2819
页数:10
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