Calculation of the Schottky barrier and current-voltage characteristics of metal-alloy structures based on silicon carbide

被引：1

作者：

Altuhov, V. I. ^{[1
]}

Kasyanenko, I. S. ^{[1
]}

Sankin, A. V. ^{[1
]}

Bilalov, B. A. ^{[2
]}

Sigov, A. S. ^{[3
]}

机构：

[1] North Caucasian Fed Univ, Inst Serv, Tourism & Design Branch, Pr 40 Let Oktyabrya 56, Pyatigorsk 357500, Russia

[2] Dagestan State Tech Univ, Pr Imama Shamilya 70, Makhachkala 367015, Russia

[3] Moscow State Tech Univ Radio Engn Elect & Automat, Pr Vernadskogo 78, Moscow 119454, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 09期

关键词：

D O I：

10.1134/S1063782616090025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A simple but nonlinear model of the defect density at a metal-semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15-25%. The calculated barrier heights are used to analyze the current-voltage characteristics of n-M/p-(SiC)(1-x) (AlN) (x) structures. The results of calculations are compared to experimental data.

引用

页码：1168 / 1172

页数：5

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