A new model relating secondary nucleation rate and supersaturation

被引：5
|
作者：
Tai, CY
Shih, CY
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 160卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(95)00915-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A new model of secondary nucleation rate regarding the effects of supersaturation is presented. The model takes account of the interfacial supersaturation, which influences the number of nuclei that is produced, and the overall supersaturation, which determines the fraction of nuclei that survived. The interfacial supersaturation can be replaced by the crystal growth rate so that the nucleation rate equation includes the overall supersaturation and crystal growth rate. This is different from the nucleation models used in the literature with only one of them appearing. Simplified models of the nucleation rate are derived and presented.
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页码：186 / 189
页数：4
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