Investigation of the epitaxial growth of octamethylene-tetrathiafulvalene (OMTTF) on substrates of different chemical reactivity

被引:0
|
作者
Poppensieker, J [1 ]
Röthig, C [1 ]
Fuchs, H [1 ]
机构
[1] Univ Munster, Inst Phys, D-48149 Munster, Germany
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Monolayers of the organic donor OMTTF (octamethylene-tetrathiafulvalene) were grown on a Ag(100) substrate and on the iodine c(2x2) superstructure on Ag(100) by organic molecular beam deposition (OMBD) under ultra high vacuum (UHV) conditions. The films were characterized by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the monolayer regime the molecules grow on both substrates in an ordered structure. By comparing the degree of long-range order and the geometrical structure observed on Ag and on iodine with that of OMTTF-TCNQ we discuss the interplay between the different interactions and long-range order in epitaxial growth.
引用
收藏
页码:188 / 192
页数:5
相关论文
共 50 条
  • [41] Epitaxial Growth of Cobalt Oxide Thin Films on Sapphire Substrates Using Atmospheric Pressure Mist Chemical Vapor Deposition
    Chen, Hou-Guang
    Wang, Huei-Sen
    Jian, Sheng-Rui
    Yeh, Tung-Lun
    Feng, Jing-Yi
    COATINGS, 2023, 13 (11)
  • [42] INVESTIGATION OF GROWTH SURFACE OF GAAS EPITAXIAL FILMS BY CHEMICAL DECORATION AND SMALL-ANGLE SHADOWING TECHNIQUE
    ALEKSAND.LN
    ZALETIN, VM
    KRIVOROT.EA
    SIDOROV, YG
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01): : 367 - &
  • [43] Growth mechanism of silicon deposited by atmospheric pressure chemical vapor deposition on different ceramic substrates
    von Ehrenwall, B
    Braun, A
    Wagemann, HG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (01) : 340 - 344
  • [44] Structural and magnetic properties of epitaxial Co2FeAl films grown on MgO substrates for different growth temperatures
    Chun, Byong Sun
    Kim, Kyung-Ho
    Leibing, Niklas
    Serrano-Guisan, Santiago
    Schumacher, Hans-Werner
    Abid, Mohamed
    Chu, In Chang
    Mryasov, Oleg N.
    Kim, Do Kyun
    Wu, Han-Chun
    Hwang, Chanyong
    Kim, Young Keun
    ACTA MATERIALIA, 2012, 60 (19) : 6714 - 6719
  • [45] Epitaxial growth of Zn-rich (Mg,Zn)O thin films on MgO substrates with different surface orientations
    Deng, Tielong
    Chen, Zekai
    Li, Yaping
    Zhang, Biwen
    Wang, Hui-Qiong
    Wang, Jia-Ou
    Wu, Rui
    Zhan, Huahan
    Kang, Junyong
    SURFACE AND INTERFACE ANALYSIS, 2023, 55 (09) : 694 - 700
  • [46] An insight into growth transition in AlN epitaxial films produced by metal-organic chemical vapour deposition at different growth temperatures
    Sahar, M. A. A. Z. Md
    Hassan, Z.
    Ng, S. S.
    Hamzah, N. A.
    Yusuf, Y.
    Novikova, N. N.
    Yakovlev, V. A.
    Klimin, S. A.
    SUPERLATTICES AND MICROSTRUCTURES, 2022, 161
  • [47] Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition
    Cai, Shuxian
    Liu, Zhonghua
    Zhong, Ni
    Liu, Shengbei
    Liu, Xingfang
    MATERIALS, 2015, 8 (09): : 5586 - 5596
  • [48] Epitaxial growth of silicon films on SiO2 patterned Si(100) substrates by atmospheric pressure chemical vapor deposition
    State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-Sen University, Guangzhou 510275, China
    Jpn. J. Appl. Phys., 9 PART3
  • [49] Epitaxial growth of SiC on silicon on insulator substrates with ultrathin top si layer by hot-mesh chemical vapor deposition
    Miura, Hitoshi
    Yasui, Kanji
    Abe, Kazuki
    Masuda, Atsushi
    Kuroki, Yuichiro
    Nishiyama, Hiroshi
    Takata, Masasuke
    Inoue, Yasunobu
    Akahane, Tadashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 569 - 572