Quantum Confinement of Hybrid Charge Transfer Excitons in GaN/InGaN/Organic Semiconductor Quantum Wells

We investigate hybrid charge transfer exciton (HCTE) confinement in organic inorganic (OI) quantum wells (QWs) comprising a thin InGaN layer bound on one side by GaN and on the other by the organic semiconductors, tetraphenyldibenzoperiflanthene (DBP) or 4,4'-bis(N-carbazoly1)-1,1'-biphenyl (CBP). A binding energy of 10 meV is calculated for the Coulombically bound free HCTE state between a delocalized electron in GaN and a hole localized in DBP. The binding energy of the HCTE increases to 165 meV when the electron is confined to a 1.5 nm In0.21Ga0.79N QW (HCTEQw). The existence of the HCTEQw is confirmed by measuring the voltage-dependent DBP exciton dissociation yield at the OI heterojunction in the QW devices that decrease with increasing In concentration and decreasing electric field, matching the trends predicted by Poole-Frenkel emission. Combining spectroscopic measurements with optical models, we find that 14 +/- 3% of the excitons that reach the GaN/DBP heterojunction form HCTEs and dissociate into free charges, while the remainder recombine. A high nonradiative recombination rate through defect states at the heterointerface account for the lack of observation of HCTEQw photoluminescence from GaN/InGaN/CBP QWs at temperatures as low as 10 K.