Luminescence of localised excitons in InGaN/GaN multiple quantum wells

被引：0

作者：

Miasojedovas, S ^{[1
]}

Jursenas, S ^{[1
]}

Kurilcik, G ^{[1
]}

Zukauskas, A ^{[1
]}

Feng, SW ^{[1
]}

Yang, CC ^{[1
]}

Chuang, HW ^{[1
]}

Kuo, CT ^{[1
]}

Tsang, JS ^{[1
]}

机构：

[1] Vilnius Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Temperature-dependent, excitation power-dependent, and time-resolved photoluminescence spectroscopy has been performed on InGaN/GaN multiple quantum wells of different thickness. The obtained spectral features are in line with the localised exciton model. The appearance of fast initial relaxation and the increase in the late-relaxation time have been observed with increasing well thickness. The results are explained by formation of large spatially separated In-rich and In-poor regions in the quantum well layers.

引用

页码：483 / 486

页数：4

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