Nonlinear Wave-Wave Interaction in Semiconductor Junction Diode

被引：0
|
作者：
Goswami, Jyotirmoy [1 ,2 ]
Chandra, Swarniv [1 ,3 ,4 ]
Das, Chinmay [4 ,5 ]
Sarkar, Jit [1 ]
机构：
[1] Jadavpur Univ, Dept Phys, Kolkata 700032, W Bengal, India
[2] JIS Univ, Dept Phys, Kolkata 700109, W Bengal, India
[3] Govt Gen Degree Coll Kushmandi, Dept Phys, Kushmandi 733121, W Bengal, India
[4] Inst Nat Sci & Appl Technol, Kolkata 700032, W Bengal, India
[5] Govt Gen Degree Coll Kushmandi, Dept Math, Kushmandi 733121, W Bengal, India
来源：
IEEE TRANSACTIONS ON PLASMA SCIENCE | 2022年 / 50卷 / 06期
关键词：
Mathematical models; Plasmas; Charge carrier processes; Physics; Semiconductor diodes; Plasma temperature; Electric potential; Electron-hole plasma; electrostatic waves; hole plasma waves; simulation; soliton-soliton interaction; ACOUSTIC SOLITARY WAVES; HOLE DRIFT VELOCITY; SUGGESTED INTERPRETATION; STATIONARY FORMATIONS; QUANTUM PLASMA; ELECTRON; IONS; SCATTERING; PROPAGATION; SILICON;
D O I：
10.1109/TPS.2021.3124454
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact among themselves and result in recombination, which supplies additional energy to the system. Such thermal energy creates additional electrical fluctuations, which exists long after the interaction has taken place. We have carried out an analytical investigation with numerical techniques as well as carried out a simulation of the wave-wave interaction in semiconductor junction diodes. In terms of signal transmission and operation of semiconductor device, such a theoretical study is important.
引用
收藏
页码：1508 / 1517
页数：10
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