Grain growth and thermal stability of Ag thin films

被引：2

作者：

Shugurov, AR ^{[1
]}

Panin, AV ^{[1
]}

Chun, HG ^{[1
]}

Loginov, BA ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia

来源：

Korus 2005, Proceedings | 2005年

关键词：

D O I：

10.1109/KORUS.2005.1507775

中图分类号：

F [经济];

学科分类号：

02 ;

摘要：

The processes of grain growth and agglomeration into separate islands in sputtered Ag thin films subjected to thermal treatment are studied by scanning probe microscopy. Using an Arrhenius relation between the grain growth constant and annealing temperature, activation energy (0.40 eV) for the grain growth process is estimated. Close value (0.38 eV) is found for activation energy for the mass transport mechanism governing the film islanding. This indicates that surface diffusion is a key mass transport mechanism controlling plastic deformation of Ag thin films under annealing.

引用

页码：528 / 531

页数：4

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